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SSM3J56MFV The Toshiba SSM3J56MFV is a P-Channel MOSFET designed for various applications. It features a 20V drain-source voltage and 800mA continuous drain current.
Mfr Part #:

SSM3J56MFV

Available from 3 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba SSM3J56MFV is a P-Channel MOSFET designed for various applications. It features a 20V drain-source voltage and 800mA continuous drain current.
✓ Total Stock: 1,216,482 pcs
$ Price Range: $2.81

SSM3J56MFV Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
1,205,000 pcs
On Request
1205000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,492 pcs
On Request
7492 pcs On Request 1 On Request On Request 21+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
3,990 pcs
On Request
3990 pcs On Request 1 On Request On Request 11+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SSM3J56MFV Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
FET Type
Failure Rate
Input Capacitance
Mounting Type
Operating Temperature
Power Dissipation
Supplier Device Package
Technology
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SSM3J56MFV Description

Short technical summary and product information.

The Toshiba SSM3J56MFV is a P-Channel MOSFET belonging to the U-MOSVI series. It is designed for surface mounting in a compact SOT-723 package. This MOSFET offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 800mA at 25°C. The on-resistance (Rds(on)) is specified at a maximum of 390mOhm at 800mA and 4.5V gate-source voltage.

 

Key electrical characteristics include an input capacitance (Ciss) of 100pF at 10V and a maximum gate-source voltage (Vgs) of ±8V. The maximum power dissipation is 150mW (Ta), and the operating temperature range is up to 150°C (TJ).

 

This component is suitable for applications requiring a small-footprint P-Channel MOSFET with moderate power handling capabilities. Its surface mount package makes it ideal for integration into compact electronic designs.

SSM3J56MFV Quick Information

Product Type: MOSFET
Series: U-MOSVI
Canonical Name: SSM3J56MFV P-Channel MOSFET
Subcategory: P-Channel

SSM3J56MFV Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SSM3J56MFV Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SSM3J56MFV Features

  • P-Channel MOSFET in SOT-723 package.
  • 20V drain-source voltage rating.
  • 800mA continuous drain current.
  • 390mOhm maximum on-resistance.
  • Surface mountable design.

SSM3J56MFV Applications

  • Suitable for general switching applications.
  • Ideal for compact electronic circuits.
  • Used in power management designs.
  • Low on-resistance for efficiency.

SSM3J56MFV FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SSM3J56MFV?

20V

What package does the SSM3J56MFV come in?

SOT-723 surface mount package

What is the maximum operating temperature?

150°C

What is the maximum continuous drain current at 25°C?

800mA

What is the on-resistance at 4.5V gate drive?

390mΩ

What is the input capacitance?

100pF at 10V

What are the drive voltage levels?

1.2V and 4.5V

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