| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSC093N04LS is an N-channel MOSFET from the OptiMOS™3 family, optimized for DC/DC converters and other switch-mode power supply (SMPS) applications. It features a very low on-resistance and excellent gate charge x R DS(on) product (FOM), contributing to efficient operation.
Key electrical characteristics include a drain-source breakdown voltage of 40V and a maximum continuous drain current of 49A at 25°C case temperature. The device exhibits a low gate threshold voltage and fast switching times, with typical values for turn-on delay at 3.6ns and fall time at 2.8ns.
This MOSFET is housed in a PG-TDSON-8 package, suitable for surface mount applications. It is Pb-free and Halogen-free, meeting environmental standards. The device is 100% avalanche tested, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 1.2V.
The maximum continuous drain current is 49A.
The typical on-resistance is 7.8mΩ.
The package type is PG-TDSON-8.
The BSC093N04LS is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.