BSC0921NDI

The Infineon BSC0921NDI is a dual N-channel MOSFET from the OptiMOS™ family, specifically engineered for high-performance buck converter applications. This device features a drain-source breakdown voltage of 30V and offers low on-state resistance (Rds(on)) values, such as 1.6 mΩ typical at VGS=10V for Q2 and 5.8 mΩ typical at VGS=10V for Q1.

With a continuous drain current rating of up to 40A at 70°C case temperature and VGS=10V, the BSC0921NDI is suitable for demanding power applications. It operates with a logic-level gate drive (4.5V rated), enhancing compatibility with various control systems. The MOSFET is qualified according to JEDEC standards and comes with Pb-free lead plating and is RoHS compliant, as well as Halogen-free.

The device is packaged in a PG-TISON-8 surface-mount package. Its thermal characteristics include a junction-to-case thermal resistance of 4.5 K/W for Q1 and 1.7 K/W for Q2, facilitating efficient heat dissipation. Dynamic characteristics such as input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) are also specified, along with switching times like turn-on delay, rise time, turn-off delay, and fall time.