| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Dale SI3410DV is an N-Channel Power MOSFET featuring TrenchFET technology. It is designed for applications such as notebook load switches and low current DC-to-DC converters.
Key electrical characteristics include a drain-source breakdown voltage of 30V. The on-state resistance (Rds(on)) is as low as 0.016 Ω at VGS = 10V and ID = 5A, and 0.019 Ω at VGS = 4.5V and ID = 4A. It offers a continuous drain current of up to 8A at 25°C case temperature.
This MOSFET is available in a compact SO-8 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is compliant with RoHS and Halogen-free standards.
Applications include power management in portable electronics and other systems requiring efficient switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The typical on-state resistance is 0.016 Ω at VGS = 10V and ID = 5A.
The SI3410DV is available in an SO-8 package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the SI3410DV is Halogen-free according to IEC 61249-2-21 Definition.