| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
129,143 pcs
|
129143 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The SI9407BDY is a P-channel enhancement-mode MOSFET manufactured by Vishay Dale in a surface-mount SO-8 package. It is designed for a wide range of switching applications.
Key electrical characteristics include a minimum drain-source breakdown voltage of -60 V and a continuous drain current of -4.7 A at a case temperature of 25 °C. The on-resistance is typically 0.12 Ω with a 10 V gate drive, and 0.15 Ω at 4.5 V. The device has a typical gate charge of 8 nC and supports single-pulse avalanche energy of 11 mJ at 15 A.
Thermal ratings include a maximum power dissipation of 5 W at 25 °C case temperature and an operating junction temperature range of -55 to +150 °C. The junction-to-ambient thermal resistance is 53 °C/W.
The SI9407BDY is lead-free and halogen-free, compliant with current environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is -60 V at VGS = 0 V and ID = -250 μA.
The continuous drain current is -4.7 A at a case temperature of 25 °C.
The on-resistance is 0.12 Ω maximum at VGS = -10 V, and 0.15 Ω maximum at VGS = -4.5 V.
The operating junction and storage temperature range is -55 to +150 °C.
The SI9407BDY comes in a surface-mount SO-8 package.
Yes, the device is lead-free and halogen-free according to the datasheet.
Maximum power dissipation is 5 W at a case temperature of 25 °C.