| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
43,380 pcs
|
43380 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
3,314 pcs
|
3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSC0911ND is a dual N-channel OptiMOS™ MOSFET optimized for high-performance buck converter applications. It features a logic level gate with a 4.5V rating and a drain-source breakdown voltage of 25V.
Key electrical characteristics include a maximum continuous drain current of 40A at 70°C case temperature with VGS=10V, and low on-state resistance (Rds(on)) as low as 1.2 mΩ (typical) at VGS=10V and ID=20A for the Q2 channel. The device also boasts fast switching times with typical rise times of 2.8ns and fall times of 2.2ns for the Q1 channel.
This MOSFET is qualified according to JEDEC standards and is Pb-free with RoHS compliance and halogen-free construction. It is supplied in a PG-TISON-8 package suitable for surface mounting.
Operating temperature ranges from -55°C to 150°C. The thermal resistance junction-to-case is 1.5 K/W for the Q2 channel and 3.4 K/W for the Q1 channel.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 25V.
The typical gate threshold voltage is 1.6V.
The maximum continuous drain current is 40A at 70°C case temperature with VGS=10V.
The maximum Rds(on) is 1.7 mΩ for the Q2 channel and 4.8 mΩ for the Q1 channel at VGS=4.5V and ID=20A.
The operating and storage temperature range is -55°C to 150°C.
The BSC0911ND is supplied in a PG-TISON-8 package.
Yes, this product is RoHS3 Compliant.