| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
266 pcs
|
266 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSC080N03LS is an N-channel Power MOSFET from the OptiMOS™3 family, optimized for DC/DC converters and Switched-Mode Power Supplies (SMPS). It features a fast switching capability and a very low on-resistance, with typical values of 9.6 mΩ at 4.5V gate drive and 6.7 mΩ at 10V gate drive.
Key electrical characteristics include a drain-source breakdown voltage of 30V and a gate threshold voltage between 1V and 2.2V. The device exhibits low gate charge characteristics, with a total gate charge typically at 7.5 nC. It is avalanche rated and offers superior thermal resistance.
The MOSFET is supplied in a PG-TDSON-8 package suitable for surface mounting. It is Pb-free and Halogen-free, compliant with RoHS standards.
This component is qualified according to JEDEC standards for target applications, making it a reliable choice for power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V minimum, and the gate-source voltage is ±20V maximum.
It is housed in a PG-TDSON-8 surface-mount package.
The junction and storage temperature range is -55°C to 150°C.
The maximum on-resistance is 8mΩ at VGS=10V and 12mΩ at VGS=4.5V.
The continuous drain current is 53A at TC=25°C with VGS=10V.
The total gate charge is 7.5nC typical, 10nC maximum.
The gate threshold voltage is between 1V and 2.2V.