BSC066N06NS The Infineon Technologies BSC066N06NS is an N-Channel MOSFET with a 60V drain-source breakdown voltage and a low on-resistance of 6.6 mOhm. It is designed for high-performance SMPS applications.
Mfr Part #:

BSC066N06NS

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSC066N06NS is an N-Channel MOSFET with a 60V drain-source breakdown voltage and a low on-resistance of 6.6 mOhm. It is designed for high-performance SMPS applications.
✓ Total Stock: 78,919 pcs
$ Price Range: $2.40

BSC066N06NS Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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78,919 pcs
78919 pcs On Request 1 On Request On Request 17+ On Request On Request

BSC066N06NS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
SVHC Present

BSC066N06NS Description

Short technical summary and product information.

The Infineon Technologies BSC066N06NS is an N-channel MOSFET belonging to the OptiMOSTM family, designed for high-performance switched-mode power supplies (SMPS) and synchronous rectification applications. It features a drain-source breakdown voltage (VDS) of 60V and a maximum on-resistance (RDS(on)) of 6.6 mΩ at a gate-source voltage (VGS) of 10V and a continuous drain current (ID) of 64A at 25°C.

 

This MOSFET is optimized for superior thermal resistance and is 100% avalanche tested. It operates within a temperature range of -55°C to 150°C and comes in a PG-TDSON-8 package suitable for surface mounting. The device is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards.

BSC066N06NS Quick Information

Product Type: MOSFET
Series: Optimos 5
Canonical Name: Infineon Technologies BSC066N06NS N-Channel MOSFET
Subcategory: N-Channel

BSC066N06NS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

BSC066N06NS Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC066N06NS Features

  • 60V drain-source breakdown voltage.
  • Low 6.6mOhm on-resistance.
  • High 64A continuous drain current.
  • Optimized for high-performance SMPS.
  • Pb-free and Halogen-free.

BSC066N06NS Applications

  • Optimized for high performance SMPS
  • Suitable for synchronous rectification circuits
  • Used in DC-DC converter designs
  • Ideal for power management applications

BSC066N06NS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the BSC066N06NS MOSFET?

The drain-source breakdown voltage (VDS) is 60V.

What is the maximum on-resistance for the BSC066N06NS MOSFET?

The maximum on-resistance (RDS(on)) is 6.6 mΩ at VGS=10V and ID=64A.

What is the continuous drain current rating for this MOSFET?

The continuous drain current (ID) is 64A at TC=25°C with VGS=10V.

What is the operating temperature range for the BSC066N06NS?

The operating and storage temperature range is -55°C to 150°C.

What package type is the BSC066N06NS MOSFET supplied in?

It is supplied in a PG-TDSON-8 package.

Is the BSC066N06NS MOSFET RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level is 1.

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