| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,543 pcs
|
1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
24 pcs
|
24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature |
The Infineon IPB010N06N is an N-channel OptiMOSTM power transistor designed for high-performance applications. It features a drain-source voltage (VDS) of 60V and a low maximum on-resistance (RDS(on)) of 1.0 mΩ at a gate-source voltage of 10V and a drain current of 180A.
This MOSFET is optimized for synchronous rectification, offering superior thermal resistance and 100% avalanche tested for reliability. It operates with a gate-source voltage range of ±20V and can handle a continuous drain current of up to 180A at 25°C.
The device is supplied in a PG-TO263-7 package, suitable for surface mounting. It is Pb-free and halogen-free, complying with RoHS and IEC61249-2-21 standards, respectively. The operating and storage temperature range is from -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The maximum on-resistance is 1.0 mΩ at VGS=10 V and ID=180 A.
The continuous drain current is 180A at VGS=10 V and TC=25 °C.
The IPB010N06N is in a PG-TO263-7 package.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The operating temperature range is -55°C to 175°C.