| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
32,338 pcs
|
32338 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies BSC014N04LS is a high-performance N-channel Power MOSFET from the OptiMOS™ family. It features a drain-source breakdown voltage of 40V and a very low on-state resistance (Rds(on)) of 1.4 mOhm at a gate-source voltage of 10V and a drain current of 205A. This MOSFET is fully qualified according to JEDEC for industrial applications and is optimized for synchronous rectification.
Key electrical characteristics include a continuous drain current of up to 205A at 25°C and 10V gate-source voltage, and a pulsed drain current of up to 820A. It also offers a high maximum operating temperature of 175°C.
The BSC014N04LS is supplied in a PG-TDSON-8 package, suitable for surface mounting. It is Pb-free and Halogen-free, complying with RoHS and IEC61249-2-21 standards. The component is 100% avalanche tested, ensuring reliability in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The maximum continuous drain current is 205A at Vgs=10V and Td=25°C.
The on-state resistance is a maximum of 1.4 mOhm at Vgs=10V and Id=205A.
The maximum operating temperature is 175°C.
The BSC014N04LS is available in the PG-TDSON-8 package.
Yes, the BSC014N04LS is RoHS3 Compliant.
Yes, the BSC014N04LS is Halogen-free.
