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BSC016N06NS The Infineon Technologies BSC016N06NS is an N-channel MOSFET with a 60V drain-source voltage and a low on-state resistance of 1.6 mOhm. It is designed for high performance and reliability.
Mfr Part #:

BSC016N06NS

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies BSC016N06NS is an N-channel MOSFET with a 60V drain-source voltage and a low on-state resistance of 1.6 mOhm. It is designed for high performance and reliability.
✓ Total Stock: 900 pcs
$ Price Range: $0.99

BSC016N06NS Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Risen Electronics ✓
Non-Authorised Inventory information
900 pcs
On Request
900 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSC016N06NS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
SVHC Present
Storage Temperature
Tape & Reel
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BSC016N06NS Description

Short technical summary and product information.

The Infineon Technologies BSC016N06NS is a high-performance N-channel Power MOSFET from the OptiMOS™ family. It features a maximum drain-source voltage (Vds) of 60V and a low on-state resistance (Rds(on)) of 1.6 mOhm at a gate-source voltage (Vgs) of 10V and a continuous drain current (Id) of 50A.

 

This MOSFET is optimized for synchronous rectification and is 100% avalanche tested. It boasts superior thermal resistance and is rated for operation up to 175°C. The component is supplied in a PG-TDSON-8 package, suitable for surface mounting.

 

Key electrical characteristics include a continuous drain current of up to 234A at 25°C and a pulsed drain current of 936A. The total gate charge (Qg) is 81 nC, with a gate charge from 0V to 10V being 71 nC. The device is Pb-free and Halogen-free compliant.

BSC016N06NS Quick Information

Product Type: N-channel MOSFET
Series: OptiMOS™ Power-MOSFET
Canonical Name: BSC016N06NS N-channel MOSFET
Subcategory: N-channel

BSC016N06NS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free

BSC016N06NS Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSC016N06NS Features

  • 60V drain-source voltage rating.
  • Low 1.6 mOhm on-state resistance.
  • High 234A continuous drain current.
  • 175°C rated for high temperature operation.
  • PG-TDSON-8 package for surface mounting.

BSC016N06NS Applications

  • Optimized for synchronous rectification.
  • Suitable for high current applications.
  • Industrial applications qualified.
  • Robust avalanche energy rating.

BSC016N06NS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the BSC016N06NS?

The maximum drain-source voltage is 60V.

What is the on-state resistance of the BSC016N06NS?

The on-state resistance is 1.6 mOhm at Vgs = 10V and Id = 50A.

What is the continuous drain current rating?

The continuous drain current is 234A at 25°C and 164A at 100°C.

What package type is the BSC016N06NS supplied in?

It is supplied in the PG-TDSON-8 package.

Is the BSC016N06NS RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

Does the BSC016N06NS meet REACH requirements?

Yes, it is REACH Unaffected.

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