| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
845 pcs
|
845 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request | |
|
400 pcs
|
400 pcs | On Request | 1 | On Request | On Request | 0726+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Infineon Technologies BSC050N03LS is an N-channel Power MOSFET from the OptiMOS™3 family, optimized for Switch Mode Power Supplies (SMPS) and DC/DC converters. This device features a low on-resistance (RDS(on)) and excellent gate charge x R DS(on) product (FOM), contributing to efficient operation.
Key electrical characteristics include a drain-source breakdown voltage of 30V and a gate threshold voltage between 1V and 2.2V. The continuous drain current can reach up to 80A under specific conditions (VGS=10V, TC=25°C). It also boasts fast switching times with typical values for turn-on delay at 5.2ns and fall time at 3.6ns.
The BSC050N03LS is housed in a PG-TDSON-8 package, suitable for surface mounting. It is designed for applications requiring high efficiency and fast switching performance, such as in power management circuits.
This MOSFET is Pb-free and Halogen-free, complying with environmental standards. It is qualified according to JEDEC for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The typical gate threshold voltage is 1 V, with a maximum of 2.2 V.
The maximum continuous drain current is 80 A at VGS=10 V and TC=25 °C.
The typical on-resistance is 4.2 mW at VGS=10 V and ID=30 A.
The BSC050N03LS is supplied in the PG-TDSON-8 package.
Yes, the BSC050N03LS is RoHS3 Compliant.
Yes, the BSC050N03LS is Halogen-free.