SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,050 pcs
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32050 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 18+22+ | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free |
The Infineon Technologies BSC014N04LSI is an N-channel OptiMOSTM Power MOSFET designed for synchronous rectification applications. It features a 40V drain-source voltage and a very low maximum on-resistance of 1.45 mΩ. The device is 100% avalanche tested and operates as a logic-level MOSFET.
Key electrical parameters include a maximum continuous drain current of 195A at 25°C with VGS=10V, and 123A at 100°C. Pulsed drain current can reach up to 780A. The MOSFET also has a typical gate charge of 55 nC and output charge of 53 nC.
Packaged in a TDSON-8 FL surface-mount package, the BSC014N04LSI is Pb-free, RoHS compliant, and halogen-free according to IEC61249-2-21. Its enlarged source interconnection enhances solder joint reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 40V.
The maximum on-resistance is 1.45 mΩ.
The maximum continuous drain current is 195A at 25°C with VGS=10V.
The BSC014N04LSI is available in a TDSON-8 FL package.
The BSC014N04LSI is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the BSC014N04LSI is halogen-free according to IEC61249-2-21.