SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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26,188 pcs
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26188 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Halogen Free | |
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The Infineon Technologies BSC014N03MS is an N-channel Power MOSFET from the OptiMOS™3 M-Series. It is optimized for 5V driver applications, including notebook and VGA power supplies, and POL converters.
Key electrical characteristics include a drain-source breakdown voltage of 30V and a maximum on-state resistance (Rds(on)) of 1.75mΩ at VGS=4.5V and ID=30A. It features a continuous drain current rating of up to 100A under various conditions and a pulsed drain current of 400A. The device also exhibits excellent gate charge characteristics, with a total gate charge typically around 34nC.
With a thermal resistance junction-to-case of 0.9 K/W, the BSC014N03MS is suitable for applications requiring efficient thermal management. It operates within a temperature range of -55°C to 150°C. The component is supplied in a PG-TDSON-8 package, designed for surface mounting.
This MOSFET is 100% avalanche tested and qualified according to JEDEC standards for target applications. It features Pb-free plating and is RoHS compliant, as well as Halogen-free.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 100A.
The maximum Rds(on) is 1.75mΩ at VGS=4.5V and 1.4mΩ at VGS=10V.
The gate threshold voltage ranges from 1V to 2V.
The operating and storage temperature range is -55°C to 150°C.
It is supplied in a PG-TDSON-8 package.
Yes, it is RoHS3 Compliant.
Yes, it is Halogen-free according to IEC61249-2-21.