SI1012RT1GE3
Vishay
The Vishay Dale SI1012RT1GE3 is an N-Channel MOSFET designed for low-voltage applications. It features a low on-resistance and fast switching speed.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,200 pcs
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10200 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
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| Halogen Free |
The Infineon Technologies BSC012N06NS is an N-channel MOSFET from the OptiMOSTM5 series, rated for 60V.
This power transistor is optimized for synchronous rectification applications. Key electrical specifications include a maximum drain-source voltage (VDS) of 60V, a maximum on-resistance (RDS(on)) of 1.2 mΩ at a gate-source voltage of 10V and 30A drain current, and a continuous drain current (ID) of 306A at 25°C case temperature.
It boasts 100% avalanche tested and superior thermal resistance. The device operates over a temperature range of -55°C to 175°C. It is Pb-free and Halogen-free compliant.
The BSC012N06NS is supplied in a TSON-8-3 package suitable for surface mounting. Its design includes an enlarged source interconnection for higher solder joint reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The maximum on-resistance is 1.2 mΩ at VGS=10 V and ID=30 A.
The continuous drain current is 306A at TC=25°C and 217A at TC=100°C.
The operating and storage temperature range is -55°C to 175°C.
The BSC012N06NS is supplied in a TSON-8-3 package.
Yes, the BSC012N06NS is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.