2SJ278MYTR-E
Hitachi
The 2SJ278MYTR-E is a P-Channel MOSFET from Hitachi with a 60V drain-source breakdown voltage and 1A continuous drain current. It features a typical on-state resistance of 0.15 Ohms at VGS = -10V.
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Siemens BF963 is a Silicon N-Channel MOSFET Tetrode manufactured by Siemens Semiconductor Group. This component is designed for use in electronic circuits requiring a dual-gate MOSFET.
Key electrical characteristics include its N-Channel MOSFET type and Silicon material composition. While specific operating voltages, currents, and temperatures are not detailed here, its classification as a Tetrode MOSFET suggests applications in signal amplification and switching.
Further details regarding package type, mounting, and specific performance parameters would typically be found in the manufacturer's datasheet. This part belongs to the Video Processing category within Amplifiers.
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| 1+ | $9.68 | $9.68 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Siemens BF963 is an N-Channel MOSFET Tetrode.
The Siemens BF963 is manufactured from Silicon.
The BF963 is RoHS3 Compliant.
The MSL for the BF963 is 1 Unlimited.
The BF963 is REACH Unaffected.