| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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74,085 pcs
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74085 pcs | On Request | 1 | On Request | On Request | 1423+ | On Request | On Request |
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The Toshiba TPCP8105 is a P-Type Silicon MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of -20V and a maximum continuous drain current of -7.2A at 25°C.
This MOSFET has a maximum on-resistance of 0.06 Ohms at VGS = -1.8V and TA = 25°C, with a typical value of 0.028 Ohms. The maximum power dissipation is rated at 1.68W.
Packaged in a surface-mount PS-8 package with dimensions of 2.80 x 2.90mm, the TPCP8105 is suitable for space-constrained designs. It has a thermal resistance junction-to-ambient of 74.4 C/W.
Key electrical characteristics include a gate-source charge of 5nC, gate-drain charge of 7nC, and total gate charge of 28nC. The material is Silicon, and it is classified as a P-Type channel device.
-20V
-7.2A
0.06 Ohms
PS-8
Surface Mount
RoHS3 Compliant
1 Unlimited