| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
226,000 pcs
|
226000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Channel Type | |
| Material | |
| Mounting Type | |
| SVHC Present | |
| Transistor Type |
The 2SJ278MYTR-E is a P-Channel enhancement-mode MOSFET manufactured by Hitachi. It is designed for small signal switching applications and features a drain-source breakdown voltage of 60V and a continuous drain current rating of 1A. The device offers a typical on-state resistance of 0.15 Ohms when driven with a gate-source voltage of -10V, and 0.2 Ohms at -4V.
This MOSFET is built on silicon technology and is housed in a standard TO-220 package with through-hole mounting, making it suitable for a wide range of general-purpose switching and amplification circuits. The typical gate-source threshold voltage is -2.5V, allowing for logic-level drive compatibility.
The 2SJ278MYTR-E is a RoHS3 compliant component and is unaffected by REACH regulations. It is classified with an MSL of 1, indicating unlimited floor life before soldering.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 60V.
The typical continuous drain current is 1A.
The typical RDS(on) is 0.15 Ohms at VGS = -10V and 0.2 Ohms at VGS = -4V.
It comes in a TO-220 package with through-hole mounting.
The typical gate-source threshold voltage is -2.5V.