| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Lead Style | |
| Material | |
| Mounting Type |
The Renesas NP90N04PUF is a single-channel N-Type Silicon MOSFET designed for power applications. It features a drain-source breakdown voltage of 40V and a maximum continuous drain current of 90A.
This MOSFET offers a low on-resistance of 0.003Ω at VGS = 10V and TA = 25°C, contributing to efficient power handling with a maximum power dissipation of 220W. Key electrical parameters include a typical gate-source charge (QGS) of 26nC, gate-drain charge (QGD) of 30nC, and total gate charge (QG) of 110nC.
Packaged in a surface-mount MP-25ZP/TO-263 with a bottom thermal pad, the NP90N04PUF is suitable for various power management circuits. It has a thermal resistance junction-to-ambient (RthJA) of 83.3°C/W and junction-to-case (RthJC) of 0.68°C/W, facilitating effective thermal management in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source breakdown voltage (BVDSS) for the NP90N04PUF is 40V.
The maximum on-resistance (RDS(ON)) is 0.003Ω at VGS = 10V and TA = 25°C.
The maximum continuous drain current (ID) is 90A at TA = 25°C.
The NP90N04PUF is supplied in a surface-mount MP-25ZP/TO-263 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.