| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
197 pcs
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197 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Storage Temperature |
The BDX53 is an NPN Epitaxial Silicon Transistor manufactured by Iskra. It is designed for applications requiring robust power handling, such as power linear and switching applications, and hammer drivers.
Key electrical characteristics include a maximum collector-emitter voltage of 100V and a continuous DC collector current of 8A. The transistor also features a maximum collector dissipation of 60W at 25°C case temperature and a junction temperature up to 150°C. The TO-220 package is suitable for through-hole mounting.
This transistor is a complement to the BDX54 series, offering similar performance characteristics for complementary circuit designs. Its specifications make it a reliable choice for various power amplification and switching tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 100V.
The maximum DC collector current is 8A, and pulse current is 12A.
BDX53 is available in a TO-220 package.
The maximum junction temperature is 150°C.
The minimum DC current gain is 750 at VCE=3V and IC=3A.
BDX53 includes a parallel diode with a maximum forward voltage of 1.8V at 3A and 2.5V at 8A.
The storage temperature range is -65°C to 150°C.
