| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The TIP125 is a PNP Epitaxial Darlington Transistor designed for medium power linear and switching applications. It is complementary to the TIP120/121/122 series.
Key electrical characteristics include a Collector-Emitter Voltage (VCEO) of -60V and a DC Collector Current (IC) of -5A. The device offers a DC Current Gain (hFE) of 1000 minimum at specified test conditions. Saturation voltages are also provided, with VCE(sat) at -2V maximum for IC = -3A, IB = -12mA, and -4V maximum for IC = -5A, IB = -20mA. The Base-Emitter ON Voltage (VBE(on)) is typically -2.5V at IC = -3A.
Absolute maximum ratings specify a Collector-Base Voltage (VCBO) of -60V and an Emitter-Base Voltage (VEBO) of -5V. The Collector Dissipation is rated at 2W at an ambient temperature of 25°C (Ta=25°C) and 65W at a case temperature of 25°C (TC=25°C). The operating junction temperature (TJ) is 150°C, with storage temperatures ranging from -65°C to 150°C.
The TIP125 is supplied in a TO-220 package, suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.94 | $1.94 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Voltage (VCEO) for the TIP125 is -60V.
The maximum DC Collector Current (IC) for the TIP125 is -5A.
The minimum DC Current Gain (hFE) for the TIP125 is 1000.
The TIP125 transistor is supplied in a TO-220 package.