| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4 pcs
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4 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BD240C from RCA is a PNP Epitaxial Silicon Transistor designed for medium power linear and switching applications. It serves as a complement to the BD239 series transistors.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 115V and a continuous collector current (IC) of 2A. The device offers a DC current gain (hFE) of up to 40 at low currents and 15 at higher currents, with a saturation voltage (VCE(sat)) of 0.7V.
The transistor is housed in a TO-220 package, suitable for through-hole mounting. It operates within a junction temperature range of 150°C and a storage temperature range of -65°C to 150°C.
This component is suitable for various electronic designs requiring a reliable PNP transistor for amplification or switching tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the BD240C is 115V.
The continuous collector current (IC) for the BD240C is 2A.
The BD240C is supplied in a TO-220 package.
The DC current gain (hFE) of the BD240C is a minimum of 15 at IC = -1A and VCE = -4V.
The collector-emitter saturation voltage (VCE(sat)) for the BD240C is a maximum of 0.7V at IC = -1A and IB = -0.2A.
