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19 pcs
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19 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The BDW52B is a power transistor from STMicroelectronics, designed as a PNP Silicon type. It is housed in a TO-3 case, indicating its suitability for applications requiring robust thermal management.
Key electrical specifications include a maximum collector current of 15A and a maximum collector-emitter voltage of 80V. The device offers a maximum power dissipation of 125W and a transition frequency of 3 MHz. The minimum forward current transfer ratio (hFE) is 20, with a maximum of 150.
This transistor operates at a maximum ambient temperature of 175°C. Its saturation voltage is specified at a maximum of 300mΩ under specific test conditions. The device is not surface mounted.
This component is suitable for various power switching and amplification applications where a high-current PNP transistor is required. Its TO-3 package facilitates efficient heat dissipation, making it a reliable choice for demanding environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the BDW52B transistor is 15A.
The maximum collector-emitter voltage for the BDW52B is 80V.
The BDW52B transistor has a maximum power dissipation of 125W.
The maximum operating temperature for the BDW52B is 175°C.
The minimum forward current transfer ratio (hFE) for the BDW52B is 20.
The BDW52B transistor is supplied in a TO-3 case.
