UT3NP06G-S08-R
UTC
The UTC UT3NP06G-S08-R is a dual enhancement mode power MOSFET featuring N-channel and P-channel configurations. It offers 60V N-channel and -60V P-channel ratings with low on-state resistance.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
74 pcs
|
74 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present |
The Infineon BCX69-16 is a PNP silicon planar medium power transistor designed for general-purpose applications. It offers high gain and low saturation voltages, making it suitable for various electronic circuits.
Key electrical characteristics include a collector-emitter breakdown voltage of -20V and a continuous collector current of -1A. The static forward current transfer ratio (hFE) ranges from 50 to 400 depending on the operating conditions. The transition frequency is 100 MHz at IC = -100mA and VCE = -5V.
This transistor is supplied in a SOT-89 surface-mount package. The operating and storage temperature range is from -65°C to +150°C. The datasheet indicates that the BCX69-16 is obsolete and recommends using the BCX69-25 as a replacement.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (VCEO) for the BCX69-16 is -20V.
The continuous collector current (IC) for the BCX69-16 is -1A.
The typical static forward current transfer ratio (hFE) at IC = -5mA and VCE = -1V is 85.
The operating and storage temperature range for the BCX69-16 is -65°C to +150°C.
The BCX69-16 is supplied in a SOT-89 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.