UT3NP06G-S08-R The UTC UT3NP06G-S08-R is a dual enhancement mode power MOSFET featuring N-channel and P-channel configurations. It offers 60V N-channel and -60V P-channel ratings with low on-state resistance.
Mfr Part #:

UT3NP06G-S08-R

Available from 1 distributors
Mfr Name: UTC
UTC
The UTC UT3NP06G-S08-R is a dual enhancement mode power MOSFET featuring N-channel and P-channel configurations. It offers 60V N-channel and -60V P-channel ratings with low on-state resistance.
✓ Total Stock: 150,000 pcs
$ Price Range: $2.81

UT3NP06G-S08-R Available from 1 distributor

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✓ Non-Authorised
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150,000 pcs
150000 pcs On Request 1 On Request On Request On Request On Request On Request

UT3NP06G-S08-R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Input Capacitance
Junction Temperature
Lead Spacing
Lead Style
Mounting Type
Power Dissipation
SVHC Present
Tape & Reel

UT3NP06G-S08-R Description

Short technical summary and product information.

The UTC UT3NP06G-S08-R is a dual enhancement mode power MOSFET from Unisonic Technologies Co., Ltd. This device integrates both an N-channel and a P-channel MOSFET, utilizing advanced technology for minimal on-state resistance, high switching speed, low gate charge, and cost-effectiveness.

 

Key electrical characteristics include a 60V drain-source voltage for the N-channel and -60V for the P-channel. The N-channel offers a continuous drain current of 3A with an RDS(on) as low as 56 mΩ at VGS=10V. The P-channel provides a continuous drain current of -3A with an RDS(on) as low as 95 mΩ at VGS=-10V.

 

This MOSFET is designed for low-voltage applications and comes in a SOP-8 package suitable for surface mounting. Its features make it a versatile component for various power management circuits where space and efficiency are critical.

 

Absolute maximum ratings include a junction temperature range of -55°C to +150°C and a power dissipation of 1W at TA=25°C. The thermal resistance (Junction to Ambient) is 125°C/W when mounted on a standard FR-4 PCB.

UT3NP06G-S08-R Quick Information

Product Type: Power MOSFET
Series: UT3NP06G
Canonical Name: UTC UT3NP06G-S08-R Dual Enhancement Mode Power MOSFET
Subcategory: Power MOSFET

UT3NP06G-S08-R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

UT3NP06G-S08-R Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

UT3NP06G-S08-R Features

  • Dual N-channel and P-channel MOSFETs.
  • 60V N-channel and -60V P-channel ratings.
  • Low on-state resistance for efficiency.
  • High switching speed and low gate charge.
  • SOP-8 package for surface mounting.

UT3NP06G-S08-R Applications

  • Ideal for low-voltage applications.
  • Suitable for power management circuits.
  • Used in switching power supplies.
  • Applicable in battery-powered devices.

UT3NP06G-S08-R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the N-channel drain-source voltage rating?

The N-channel drain-source voltage rating is 60V.

What is the P-channel drain-source voltage rating?

The P-channel drain-source voltage rating is -60V.

What is the continuous drain current for the N-channel?

The continuous drain current for the N-channel is 3A.

What is the continuous drain current for the P-channel?

The continuous drain current for the P-channel is -3A.

What is the typical on-state resistance for the N-channel at VGS=10V?

The typical on-state resistance for the N-channel at VGS=10V is 56mΩ.

What is the typical on-state resistance for the P-channel at VGS=-10V?

The typical on-state resistance for the P-channel at VGS=-10V is 95mΩ.

What is the package type for the UT3NP06G-S08-R?

The package type is SOP-8.

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