| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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150,000 pcs
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150000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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| Tape & Reel |
The UTC UT3NP06G-S08-R is a dual enhancement mode power MOSFET from Unisonic Technologies Co., Ltd. This device integrates both an N-channel and a P-channel MOSFET, utilizing advanced technology for minimal on-state resistance, high switching speed, low gate charge, and cost-effectiveness.
Key electrical characteristics include a 60V drain-source voltage for the N-channel and -60V for the P-channel. The N-channel offers a continuous drain current of 3A with an RDS(on) as low as 56 mΩ at VGS=10V. The P-channel provides a continuous drain current of -3A with an RDS(on) as low as 95 mΩ at VGS=-10V.
This MOSFET is designed for low-voltage applications and comes in a SOP-8 package suitable for surface mounting. Its features make it a versatile component for various power management circuits where space and efficiency are critical.
Absolute maximum ratings include a junction temperature range of -55°C to +150°C and a power dissipation of 1W at TA=25°C. The thermal resistance (Junction to Ambient) is 125°C/W when mounted on a standard FR-4 PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The N-channel drain-source voltage rating is 60V.
The P-channel drain-source voltage rating is -60V.
The continuous drain current for the N-channel is 3A.
The continuous drain current for the P-channel is -3A.
The typical on-state resistance for the N-channel at VGS=10V is 56mΩ.
The typical on-state resistance for the P-channel at VGS=-10V is 95mΩ.
The package type is SOP-8.