UT3NP06G-S08-R
UTC
The UTC UT3NP06G-S08-R is a dual enhancement mode power MOSFET featuring N-channel and P-channel configurations. It offers 60V N-channel and -60V P-channel ratings with low on-state resistance.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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45,200 pcs
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45200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The Vishay Siliconix SiR104DP is a TrenchFET Gen IV power MOSFET designed for high-efficiency applications. It features a 100V drain-source voltage and a maximum continuous drain current of 79A at 25°C case temperature.
This N-Channel MOSFET boasts very low RDS(on) figures, with a maximum of 0.0064 Ω at VGS = 10V. It is tuned for a low RDS-Qg and RDS-Qoss figure-of-merit, making it suitable for demanding power conversion tasks.
The SiR104DP is available in a PowerPAK SO-8 package, designed for surface mounting. Its robust thermal characteristics include a typical junction-to-case thermal resistance of 11.2 °C/W.
Key applications include synchronous rectification, primary side switching, DC/DC converters, power supplies, motor drive control, and battery/load switching.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
The maximum continuous drain current is 79 A at 25°C case temperature.
The typical gate charge (Qg) is 43 nC.
The package type is PowerPAK SO-8.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
The REACH status is REACH Unaffected.