| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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90,400 pcs
|
90400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SK1764KYTR-E is a high-performance N-channel single power MOSFET. It features a maximum drain-source voltage (VDSS) of 60V and a continuous drain current (ID) of 2A. The on-resistance (RDS(ON)) is specified at a maximum of 450mohm at 10V gate-source voltage, with a typical value of 300mohm at 10V/8V. The input capacitance (Ciss) is typically 140pF.
This MOSFET is housed in a UPAK/SC-62 surface mount package with 4 leads. Its dimensions include a thickness of 1.6mm. The part is rated for a power dissipation (Pch) of 1W. The gate-source voltage (VGSS) is 20V, and the gate-source off voltage (Vgs(off)) is a maximum of 2V.
Designed for industrial and consumer applications, the 2SK1764KYTR-E offers reliable performance for power switching and amplification tasks. Its surface mount capability allows for efficient integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDSS) for the 2SK1764KYTR-E is 60V.
The continuous drain current (ID) for the 2SK1764KYTR-E is 2A.
The maximum on-resistance (RDS(ON)) at 10V is 450mohm, with a typical value of 300mohm at 10V/8V.
The 2SK1764KYTR-E is in a UPAK/SC-62 package.
This MOSFET is designed for surface mounting.