| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15,000 pcs
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15000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Diodes Incorporated DCX55 is an NPN epitaxial planar die construction transistor, ideally suited for automated assembly processes and medium power switching or amplification applications. It offers a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 1A.
This device operates within a temperature range of -55°C to +150°C and has a power dissipation of 1W at 25°C. The transistor is housed in a SOT89-3L package, making it suitable for surface mount applications. Its terminals feature a matte tin finish over a copper leadframe, ensuring solderability per MIL-STD-202, Method 208.
The DCX55 is lead-free by design and RoHS compliant. Its complementary PNP type is available as the DCX52. Key electrical characteristics include a collector-emitter saturation voltage (VCE(SAT)) of 0.5V maximum at 500mA/50mA and a DC current gain (hFE) ranging from 63 to 250 depending on the operating conditions and specific part variant (DCX55 or DCX55-16). The transition frequency (fT) is typically 200MHz at 50mA/5V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V, collector-base voltage is 60V, and emitter-base voltage is 5V.
The DCX55 is housed in a SOT89-3L surface mount package.
-55°C to +150°C.
Typical hFE is 63 at IC=5mA, VCE=2V; minimum 40 at IC=500mA, VCE=2V.
200MHz typical at IC=50mA, VCE=5V, f=100MHz.
0.5V maximum at IC=500mA, IB=50mA.
Yes, the DCX55 is obsolete and discontinued. A recommended replacement is the BCX5616TA from Diodes Incorporated.