| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BCR185W is a PNP Silicon Digital Transistor suitable for various applications including switching circuits, inverters, interface circuits, and driver circuits. It is housed in a compact SOT-323 package, making it ideal for space-constrained designs.
Key electrical characteristics include a collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 100mA. The transistor features built-in bias resistors with R1 typically 10 kΩ and R2 typically 47 kΩ. The DC current gain (hFE) is a minimum of 70 at 5mA collector current and 5V VCE. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.3V at 10mA IC and 0.5mA IB.
This AEC-Q101 qualified component offers a transition frequency (fT) of 200MHz at 10mA IC and 5V VCE, and a collector-base capacitance (Ccb) of 3pF at 10V VCB and 1MHz. The operating junction temperature is up to 150°C, with a storage temperature range of -65°C to 150°C. The BCR185W is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.07 | $1.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the BCR185W is 50V.
The maximum continuous collector current (IC) for the BCR185W is 100mA.
The BCR185W is available in a SOT-323 package.
The BCR185W has built-in bias resistors with R1 typically 10 kΩ and R2 typically 47 kΩ.
The DC current gain (hFE) of the BCR185W is a minimum of 70 at 5mA IC and 5V VCE.
The collector-emitter saturation voltage (VCEsat) for the BCR185W is a maximum of 0.3V at 10mA IC and 0.5mA IB.
The transition frequency (fT) of the BCR185W is typically 200MHz at 10mA IC and 5V VCE.
