| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,100 pcs
|
1100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon BCR133 is an NPN Silicon Digital Transistor suitable for various applications including switching, inverter, and interface circuits. It is built with integrated bias resistors (R1 = 10 kΩ, R2 = 10 kΩ).
Key electrical characteristics include a collector-emitter voltage (VCEO) of 50V and a collector current (IC) of 100mA. The DC current gain (hFE) is a minimum of 30 at 5mA collector current and 5V VCE. The collector-emitter saturation voltage (VCEsat) is a maximum of 0.3V at 10mA IC and 0.5mA IB.
This transistor operates within a junction temperature range of -65°C to 150°C and has a total power dissipation of up to 250mW depending on the package and ambient temperature. The BCR133 is supplied in a compact SOT-323 surface-mount package, making it suitable for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50 V.
SOT-323 surface-mount package.
150 °C.
Minimum 30 at IC=5 mA, VCE=5 V.
10 kΩ typical, range 7 kΩ to 13 kΩ.
130 MHz typical.
200 mW for BCR133, 250 mW for BCR133S and BCR133W.
