| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,821 pcs
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6821 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The AOS AOTF7N60 is an N-Channel MOSFET with a Drain-Source Voltage (VDS) rating of 600V and a continuous drain current (ID) of 7A at 25°C. Fabricated using an advanced high voltage MOSFET process, this device is designed for high performance and robustness in popular AC-DC applications.
Key electrical characteristics include a low Drain-Source On-Resistance (RDS(ON)) of typically 1.2Ω at VGS=10V, a Gate Threshold Voltage (VGS(th)) ranging from 3V to 4.5V, and a Total Gate Charge (Qg) of up to 28nC. The MOSFET also boasts guaranteed avalanche capability, with a single pulsed avalanche energy (EAR) of 270mJ.
Packaged in a TO220F through-hole package, the AOTF7N60 is suitable for various industrial power supply and motor drive applications. Its robust design and electrical specifications make it a reliable choice for designers looking to integrate high-voltage switching capabilities into their systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 600V minimum.
The AOTF7N60 comes in a TO220F through-hole package.
The junction temperature range is -55°C to 150°C.
The gate threshold voltage is minimum 3V, typical 3.9V, and maximum 4.5V at ID=250μA.
The maximum continuous drain current is 7A at case temperature 25°C, derated to 4.8A at 100°C.
The maximum on-resistance is 1.2Ω at VGS=10V, ID=7A.
The input capacitance is typically 861pF and maximum 1035pF.
