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41 pcs
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41 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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The Semtech 2N5401 is a PNP silicon bipolar junction transistor designed for amplifier applications. It features a high collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 600mA.
This transistor is housed in a standard TO-92 package, making it suitable for through-hole mounting. Key electrical characteristics include a maximum power dissipation of 625mW at 25°C ambient temperature and a transition frequency (fT) of 100MHz.
The 2N5401 is commonly used in various amplification circuits where a reliable PNP transistor is required. Its specifications make it a versatile component for general-purpose amplification and switching tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum VCEO is 150V at IC = 1.0mA.
The maximum continuous collector current is 600mA.
Power dissipation is 625mW at 25°C ambient and 1.5W at 25°C case temperature.
The 2N5401 is offered in a TO-92 through-hole package.
The junction temperature range is -55°C to +150°C.
The DC current gain (hFE) ranges from 50 to 240, typical 60 at IC=10mA, VCE=5V.
Yes, the 2N5401 is Pb-Free as confirmed by the datasheet.