| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Lead Style | |
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| Power Dissipation | |
| Tape & Reel | |
| Voltage Supply |
The MPS8598RCRA is a bipolar junction transistor (BJT) manufactured by Central Semiconductor Corp. It is designed for general-purpose applications and offers a collector-emitter breakdown voltage of up to 60V and a continuous collector current rating of 1A.
Key electrical characteristics include a maximum power dissipation of 625mW and a minimum DC current gain (hFE) of 100 at 10V and 10mA. The transistor has a transition frequency of 150MHz at 10V, 500mA, and 100MHz, making it suitable for various switching and amplification tasks.
This component is housed in a TO-92-3 package, which is a common through-hole package. It operates within a temperature range of -65°C to 150°C. The standard package quantity is 3000 units on tape and reel.
Environmental compliance includes RoHS3 compliance, an MSL of 1, and REACH unaffected status.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The maximum continuous collector current is 1A.
The maximum power dissipation is 625mW.
The minimum DC current gain (hFE) is 100 at 10V and 10mA.
The transition frequency is 150MHz at 10V, 500mA, and 100MHz.
The operating temperature range is -65°C to 150°C.
The MPS8598RCRA is in a TO-92-3 package.