| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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977 pcs
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977 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N5401 is a PNP bipolar junction transistor manufactured by LGE. It features a collector-emitter breakdown voltage of 150 Vdc and a continuous collector current rating of 600 mAdc, making it suitable for high-voltage switching and amplification applications.
At IC = 10 mAdc and VCE = 5 Vdc, the DC current gain (hFE) is minimum 60; saturation voltage is 0.5 Vdc maximum at IC = 50 mAdc and IB = 5 mAdc. The current-gain bandwidth product ranges from 100 to 300 MHz. Power dissipation is rated 625 mW at 25°C ambient and 1.5 W at 25°C case temperature.
The transistor is available in a TO-92 / TO-92-3 through-hole package and operates over a junction temperature range of -55°C to +150°C. It is intended for general-purpose high-voltage circuits such as drivers, switches, and small-signal amplifiers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Minimum 150 Vdc at IC = 1.0 mAdc, IB = 0.
600 mAdc continuous.
-55°C to +150°C.
TO-92 (TO-92-3) through-hole package.
Minimum 60 at IC = 10 mAdc and VCE = 5 Vdc.
Maximum 0.5 Vdc at IC = 50 mAdc and IB = 5 mAdc.
100 to 300 MHz.