2N3583 is an NPN bipolar junction transistor from NTE Electronics. It features a collector-emitter breakdown voltage of 175V, collector current of 10mA, and power dissipation of 35W.
The 2N3441 is an NPN bipolar junction transistor from Microchip Technology with a collector-emitter voltage rating of 140V and collector current of 3A. It comes in a through-hole TO-66 package.
2N6301 is an NPN Darlington transistor from Microchip Technology rated for 80V collector-emitter voltage and 8A continuous collector current with a minimum DC current gain of 750.
