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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2N3441 is a silicon NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It features a collector-emitter breakdown voltage (VCEO) of 140V and a continuous collector current (IC) rating of 3A, with a power dissipation of 3W. The device offers a minimum DC current gain (hFE) of 25 at 500mA collector current and 4V collector-emitter voltage, and a low collector-emitter saturation voltage of 1V maximum at 500mA. The transistor is housed in a TO-66 (TO-213AA) through-hole package, suitable for socket or direct solder mounting. It operates over a junction temperature range of -65°C to 200°C, making it suitable for demanding thermal environments. Typical applications include power switching circuits, linear amplifiers, and driver stages in industrial and consumer electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $29.05 | $29.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 140V.
The 2N3441 is available in a TO-66 (TO-213AA) through-hole package.
The junction temperature range is -65°C to 200°C.
The part is listed as RoHS3 compliant, but this is unverified and conflicts with distributor data indicating non-compliance.
The maximum continuous collector current (IC) is 3A.
The power dissipation is 3W.
The minimum hFE is 25 at Ic=500mA, Vce=4V.
