| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,500 pcs
|
6500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N6301 is a high-current NPN Darlington transistor manufactured by Microchip Technology. It is designed for switching and amplification applications requiring high gain and moderate power handling.
Key electrical ratings include a collector-emitter breakdown voltage of 80V, continuous collector current of 8A, and a power dissipation capability of 75W. The device offers a minimum DC current gain of 750 when tested at 4A collector current and 3V Vce. Maximum saturation voltage is 3V at 80mA base current and 8A collector current.
The transistor is housed in a through-hole TO-66 (TO-213AA) package, suitable for socketed or board-mount applications that require robust mechanical attachment. The junction operating temperature range spans -55°C to 200°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $31.54 | $31.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) is 80V.
The continuous collector current (Ic) rating is 8A.
The 2N6301 is available in a through-hole TO-66 (TO-213AA) package.
The junction operating temperature range is -55°C to 200°C.
RoHS status is listed as RoHS3 Compliant but is unverified — treat as low confidence.