| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The JANTX2N6301 from Microchip Technology is a high-performance NPN Darlington bipolar junction transistor (BJT). It is designed for applications requiring significant current handling and voltage capability.
Key electrical specifications include a collector-emitter voltage of 80V and a continuous collector current of 8A. The transistor boasts a high DC current gain (hFE) of 750 at 4A and 3V, with a Vce saturation of 3V at 80mA and 8A. It is rated for a power dissipation of 75W.
This component operates within a wide temperature range of -55°C to 200°C (TJ). It is housed in a TO-213AA, TO-66-2 package, also referred to as TO-66 (TO-213AA), and features through-hole mounting.
The JANTX2N6301 is suitable for various power switching and amplification circuits where reliability and performance are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 80V.
The continuous collector current is 8A.
The power dissipation is 75W.
The operating temperature range is -55°C to 200°C (TJ).
The JANTX2N6301 is available in a TO-213AA, TO-66-2 package, also known as TO-66 (TO-213AA).
The JANTX2N6301 is mounted using the through-hole method.