| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2N3583 is an NPN bipolar junction transistor manufactured by NTE Electronics. It is designed for through-hole mounting in a TO-66 (TO-213AA) package.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 175V, a collector current (Ic) rating of 10mA, and a power dissipation (Pc) of 35W. The DC current gain (hFE) has a minimum value of 40 at a test condition of Ic=500mA and Vce=10V.
The device operates over a junction temperature range of -65°C to 200°C. It is supplied in a TO-66 (TO-213AA) package, suitable for through-hole assembly.
The collector-emitter breakdown voltage (Vceo) is 175V.
The maximum collector current (Ic) is 10mA.
The power dissipation (Pc) is 35W.
The 2N3583 is available in a TO-66 (TO-213AA) through-hole package.
The operating junction temperature range is -65°C to 200°C.
The part is listed as RoHS3 Compliant, but this data is unverified and should be treated as low confidence.