NTJD5121NT1G
On Semiconductor
The NTJD5121NT1G is a dual N-channel MOSFET from ON Semiconductor, featuring 60V drain-source voltage and 295mA continuous drain current. It is supplied in an SC-88 package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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14,000 pcs
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14000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) |
The 2SJ634-E is a P-Channel MOSFET manufactured by On Semiconductor. It is designed for switching and amplification applications requiring a 60V drain-source voltage rating and 8A continuous drain current capability.
As a P-Channel device, this MOSFET is suitable for high-side switching configurations where a positive supply rail needs to be switched. The 60V voltage rating and 8A current rating make it appropriate for medium-power applications in power management, load switching, and DC-DC conversion circuits.
The device is part of On Semiconductor's discrete MOSFET portfolio, offering a balance of voltage and current handling for general-purpose power switching needs. Its P-Channel polarity simplifies drive circuitry in certain topologies by allowing direct connection to the positive supply rail.
| Qty | Low | High |
|---|---|---|
| 162+ | $1.85 | $1.85 |
| 700+ | $0.80 | $0.80 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SJ634-E has a drain-source voltage rating of 60V.
The 2SJ634-E is rated for 8A continuous drain current.
The 2SJ634-E is a P-Channel MOSFET.
