NTJD5121NT1G The NTJD5121NT1G is a dual N-channel MOSFET from ON Semiconductor, featuring 60V drain-source voltage and 295mA continuous drain current. It is supplied in an SC-88 package.
Mfr Part #:

NTJD5121NT1G

Available from 7 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTJD5121NT1G is a dual N-channel MOSFET from ON Semiconductor, featuring 60V drain-source voltage and 295mA continuous drain current. It is supplied in an SC-88 package.
Total Stock: 3,938,039 pcs
$ Price Range: $0.99

NTJD5121NT1G Available from 7 distributors

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NTJD5121NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

NTJD5121NT1G Description

Short technical summary and product information.

The NTJD5121NT1G is a dual N-channel MOSFET designed for applications such as low-side load switches and DC-DC converters. It offers a drain-to-source voltage of 60V and a continuous drain current of 295mA at 25°C.

 

Key electrical characteristics include a low gate threshold voltage and low input capacitance. The MOSFET also features ESD protection on the gate. It is available in the SC-88 (SOT-363) package, suitable for surface mounting.

 

This device operates over a wide temperature range from -55°C to 150°C. The Pb-free designation indicates compliance with environmental standards.

NTJD5121NT1G Quick Information

Product Type: MOSFET
Canonical Name: NTJD5121NT1G Dual N-Channel MOSFET
Subcategory: N-Channel

NTJD5121NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb−Free Device

NTJD5121NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTJD5121NT1G Features

  • Dual N-Channel MOSFET configuration.
  • 60V drain-to-source voltage.
  • 295mA continuous drain current.
  • SC-88 (SOT-363) surface mount package.
  • Logic Level Gate operation.

NTJD5121NT1G Applications

  • Used in switching power supplies
  • Suitable for portable electronic devices
  • Ideal for space-constrained circuit designs
  • Applicable in low-voltage amplification circuits

NTJD5121NT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTJD5121NT1G?

The maximum drain-to-source voltage (Vdss) for the NTJD5121NT1G is 60V.

What is the continuous drain current of the NTJD5121NT1G?

The continuous drain current (ID) for the NTJD5121NT1G is 295mA at 25°C in steady state.

What package type is the NTJD5121NT1G MOSFET supplied in?

The NTJD5121NT1G is supplied in the SC-88, SC70-6, or SOT-363 package.

What is the operating temperature range for the NTJD5121NT1G?

The operating junction and storage temperature range for the NTJD5121NT1G is -55°C to 150°C.

Is the NTJD5121NT1G RoHS compliant?

Yes, the NTJD5121NT1G is RoHS3 Compliant.

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