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BSS138PS,115 Dual N-channel enhancement mode FET in SOT363 package. 60V drain-source voltage, 320mA drain current, 1.6Ohm on-resistance.
Mfr Part #:

BSS138PS,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
Dual N-channel enhancement mode FET in SOT363 package. 60V drain-source voltage, 320mA drain current, 1.6Ohm on-resistance.
✓ Total Stock: 1,810,020 pcs
$ Price Range: $0.05 - $0.33

BSS138PS,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,810,020 pcs
On Request
1810020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

BSS138PS,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id
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BSS138PS,115 Description

Short technical summary and product information.

The BSS138PS is a dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) surface-mount plastic package using Trench MOSFET technology. It features logic-level gate drive and very fast switching.

 

Electrical characteristics per transistor: drain-source voltage 60V maximum, drain current 320mA nominal at Vgs=10V, maximum on-resistance of 1.6 Ohm at Id=300mA and Vgs=10V. Gate threshold voltage is 1.5V maximum at Id=250µA. Gate charge is 0.8nC maximum at Vgs=4.5V. Input capacitance is 50pF maximum at Vds=10V. Maximum power dissipation is 420mW per device.

 

The device is AEC-Q101 qualified and suitable for applications such as relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits. It is mounted in a 6-lead SC-88/SOT-363 package with a supply device package of 6-TSSOP.

BSS138PS,115 Quick Information

Product Type: MOSFET Array
Canonical Name: BSS138PS
Subcategory: Dual N-Channel

BSS138PS,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

BSS138PS,115 Estimated Pricing

Qty Low High
1+ $0.33 $0.33
10+ $0.20 $0.20
100+ $0.13 $0.13
500+ $0.09 $0.09
1,000+ $0.08 $0.08
3,000+ $0.06 $0.06
6,000+ $0.06 $0.06
24,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

BSS138PS,115 Features

  • Dual N-channel Trench MOSFET in SOT363 package.
  • Logic-level gate drive compatible with 1.5V threshold.
  • 60V drain-source voltage with 320mA drain current.
  • 1.6 Ohm maximum on-resistance at 10V gate drive.
  • AEC-Q101 qualified for automotive applications.

BSS138PS,115 Applications

  • Ideal for relay driver and solenoid driver circuits.
  • Suitable for high-speed line driver applications.
  • Commonly used in low-side loadswitch designs.
  • Excellent for general-purpose switching circuits.

BSS138PS,115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the BSS138PS?

The maximum drain-source voltage is 60V.

What is the continuous drain current rating?

The continuous drain current is 320mA at Tamb=25°C with Vgs=10V.

What is the on-resistance of the BSS138PS?

The maximum drain-source on-resistance is 1.6 Ohm at Id=300mA and Vgs=10V.

What package is the BSS138PS available in?

It is available in an SC-88 / SOT-363 (6-TSSOP) surface-mount package.

Is the BSS138PS AEC-Q101 qualified?

Yes, the BSS138PS is AEC-Q101 qualified per the datasheet.

What is the maximum power dissipation?

The maximum power dissipation per transistor is 420mW at Tamb=25°C.

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