FQU11P06TU
On Semiconductor
P-Channel MOSFET with 60V drain-source voltage and 9.4A drain current. Housed in a through-hole IPAK package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,397 pcs
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1397 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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The 2SJ176-E is a P-Channel Power MOSFET manufactured by Renesas. It is designed for switching and amplification applications requiring a P-Channel device. The MOSFET has a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15A. It is housed in a TO-220FM package, which is a through-hole mounting type suitable for PCB assembly. The device is RoHS3 compliant and has a moisture sensitivity level of MSL 1 (unlimited). As a P-Channel MOSFET, it is commonly used in load switch, power management, and battery protection circuits where a positive voltage supply is switched. The TO-220FM package offers good thermal performance for moderate power dissipation. Note that detailed electrical characteristics such as on-resistance and gate charge are not available in the current data set.
| Qty | Low | High |
|---|---|---|
| 89+ | $3.36 | $3.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
TO-220FM
Yes, it is listed as RoHS3 Compliant (unverified).
60 V
15 A
P-Channel
Through Hole
MSL 1 (Unlimited)
