FQU11P06TU P-Channel MOSFET with 60V drain-source voltage and 9.4A drain current. Housed in a through-hole IPAK package.
Mfr Part #:

FQU11P06TU

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET with 60V drain-source voltage and 9.4A drain current. Housed in a through-hole IPAK package.
✓ Total Stock: 35,620 pcs
$ Price Range: $0.76

FQU11P06TU Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
25,200 pcs
25200 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
10,420 pcs
10420 pcs On Request 1 On Request On Request On Request On Request On Request

FQU11P06TU Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQU11P06TU Description

Short technical summary and product information.

The FQU11P06TU is a P-Channel enhancement-mode MOSFET from ON Semiconductor, designed for medium-power switching applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 9.4A at case temperature. The device offers a maximum on-resistance (Rds(on)) of 185 mOhm at Vgs = 10V and Id = 4.7A, ensuring efficient power handling.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V maximum at 250µA, a gate charge (Qg) of 17 nC at Vgs = 10V, and an input capacitance (Ciss) of 550 pF at Vds = 25V. The MOSFET can dissipate up to 38W at case temperature (Tc = 25°C) and 2.5W at ambient temperature (Ta = 25°C). It operates over a junction temperature range of -55°C to 150°C.

 

The device is housed in a through-hole TO-251-3 (IPAK) package, also known as I-PAK, which is suitable for automated assembly and provides good thermal performance. The mounting type is through hole, making it compatible with standard PCB layouts.

 

Typical applications include power management in consumer electronics, load switching, battery protection circuits, and DC-DC converters. The FQU11P06TU is RoHS3 compliant (unverified) and has an MSL rating of 1 (unlimited).

FQU11P06TU Quick Information

Product Type: P-Channel MOSFET
Series: QFET
Canonical Name: FQU11P06TU P-Channel MOSFET, 60V, 9.4A, IPAK
Subcategory: P-Channel MOSFET

FQU11P06TU Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQU11P06TU Estimated Pricing

Qty Low High
1,000+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQU11P06TU Features

  • P-Channel MOSFET with 60V drain-source rating.
  • Continuous drain current of 9.4A.
  • Low on-resistance of 185 mOhm.
  • Through-hole IPAK package for easy mounting.
  • Wide operating temperature range -55°C to 150°C.

FQU11P06TU Applications

  • Ideal for power management in portable devices.
  • Used in load switching and battery protection.
  • Suitable for DC-DC converter circuits.
  • Applicable in automotive and industrial systems.

FQU11P06TU FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (junction).

What package is this MOSFET available in?

TO-251-3 (IPAK) through-hole package.

Is this component RoHS compliant?

RoHS3 compliant (unverified).

What is the drain-source voltage rating?

60V.

What is the maximum drain current?

9.4A at case temperature.

What is the typical gate threshold voltage?

Maximum 4V at 250µA.

What is the maximum on-resistance?

185mOhm at 4.7A and 10V gate drive.

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