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G65P06T The G65P06T is a P-Channel power MOSFET from Goford Semiconductor with a drain-source voltage of 60V and continuous drain current of 65A. It features a low on-resistance of 18mOhm and is housed in a TO-220 through-hole package.
Mfr Part #:

G65P06T

Available from 1 distributors
Mfr Name: Goford Semiconductor
Goford Semiconductor
The G65P06T is a P-Channel power MOSFET from Goford Semiconductor with a drain-source voltage of 60V and continuous drain current of 65A. It features a low on-resistance of 18mOhm and is housed in a TO-220 through-hole package.
✓ Total Stock: 18,000 pcs
$ Price Range: $0.76 - $2.21

G65P06T Available from 1 distributor

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✓ Non-Authorised
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Innova Technologies ✓
Non-Authorised Inventory information
18,000 pcs
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18000 pcs On Request 1 On Request On Request On Request On Request On Request
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G65P06T Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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G65P06T Description

Short technical summary and product information.

The G65P06T is a P-Channel enhancement-mode power MOSFET designed for high-efficiency power management applications. Manufactured by Goford Semiconductor, this device offers a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 65A at 25°C. The maximum on-resistance (Rds(on)) is 18mOhm at Vgs = -10V and Id = 20A, enabling low conduction losses.

 

The gate threshold voltage (Vgs(th)) is 3.5V maximum at Id = 250µA, and the device can be driven with gate voltages up to ±20V. The input capacitance (Ciss) is 5814pF at Vds = 25V, and the total gate charge (Qg) is 75nC at Vgs = 10V, which helps in estimating switching performance.

 

The G65P06T is supplied in a standard TO-220-3 through-hole package, suitable for PCB mounting with heatsinking. The operating junction temperature range is -55°C to +175°C, making it appropriate for demanding thermal environments. Typical applications include power supply circuits, motor control, battery protection, and DC-DC converters where a P-Channel MOSFET is required.

G65P06T Quick Information

Product Type: Power MOSFET
Canonical Name: G65P06T P-Channel Power MOSFET
Subcategory: P-Channel MOSFET

G65P06T Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 - Unlimited
REACH Status: REACH Unaffected

G65P06T Estimated Pricing

Qty Low High
1+ $2.21 $2.21
10+ $1.41 $1.41
50+ $1.07 $1.07
100+ $0.96 $0.96
500+ $0.76 $0.76

Estimated market price range - modelled values for guidance only, not live distributor offers.

G65P06T Features

  • P-Channel power MOSFET with 60V drain-source voltage.
  • Continuous drain current rated at 65A at 25°C.
  • Low on-resistance of 18mOhm maximum at -10V gate drive.
  • TO-220 through-hole package for easy heatsink mounting.
  • Wide operating junction temperature range -55°C to +175°C.

G65P06T Applications

  • Ideal for power supply and DC-DC converter circuits.
  • Used in motor control and driver applications.
  • Suitable for battery protection and management systems.
  • Applicable in load switching and power routing.

G65P06T FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the G65P06T?

The drain-source voltage (Vdss) is 60V.

What is the maximum continuous drain current of the G65P06T?

The continuous drain current (Id) is 65A at 25°C.

What is the on-resistance of the G65P06T?

The maximum on-resistance (Rds(on)) is 18mOhm at Vgs = -10V and Id = 20A.

What package does the G65P06T come in?

The G65P06T is supplied in a TO-220-3 through-hole package.

What is the operating temperature range of the G65P06T?

The operating junction temperature range is -55°C to +175°C.

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