Mfr Part #:

G65P06T

Name: G65P06T
Brand: Goford Semiconductor
SKU: G65P06T
Availability: InStock

Description:

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

✓ Total Stock: 18,000 pcs

G65P06T Available from 1 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Innova Technologies ✓ Non-Authorised Inventory information	18,000 pcs On Request	18000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Goford Semiconductor
Current	65A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5814 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Power Dissipation (Max)	130W (Tc)
Rds On (Max) @ Id, Vgs	18mOhm @ 20A, 10V
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3.5V @ 250µA