FQP47P06 P-Channel enhancement mode power MOSFET with 60V drain-source voltage and 47A continuous drain current in a TO-220-3 through-hole package.
Mfr Part #:

FQP47P06

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel enhancement mode power MOSFET with 60V drain-source voltage and 47A continuous drain current in a TO-220-3 through-hole package.
✓ Total Stock: 8,121 pcs

FQP47P06 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FQP47P06 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQP47P06 Description

Short technical summary and product information.

The FQP47P06 is a P-Channel enhancement mode power MOSFET manufactured by On Semiconductor using their proprietary planar stripe and DMOS technology. This MOSFET is designed to deliver low on-state resistance of 26mOhm maximum at 10V gate drive, enabling efficient power handling in a variety of applications.

 

Key electrical characteristics include a drain-source voltage rating of -60V, continuous drain current of -47A at 25°C case temperature, and a maximum power dissipation of 160W. The device features a gate threshold voltage of 4V maximum at 250µA drain current and a maximum gate charge of 110nC at 10V, supporting efficient switching performance.

 

The FQP47P06 is housed in a standard TO-220-3 through-hole package, suitable for easy mounting on heatsinks. It is rated for operation over a junction temperature range of -55°C to 175°C, with a maximum junction-to-case thermal resistance of 0.94°C/W. The device is 100% avalanche tested and offers high avalanche energy capability of 820mJ single pulse.

FQP47P06 Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQP47P06 P-Channel MOSFET
Subcategory: Single MOSFET

FQP47P06 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQP47P06 Features

  • P-Channel enhancement mode power MOSFET.
  • 60V drain-source voltage rating.
  • 47A continuous drain current at 25°C.
  • 26mOhm on-resistance at 10V gate drive.
  • TO-220-3 through-hole package.

FQP47P06 Applications

  • Used in switched mode power supplies.
  • Suitable for audio amplifier circuits.
  • Ideal for DC motor control applications.
  • Applicable in variable switching power systems.

FQP47P06 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQP47P06?

The drain-source voltage (VDSS) is -60 V.

What is the maximum continuous drain current?

The continuous drain current is -47 A at Tc = 25°C.

What is the on-resistance of the FQP47P06?

The maximum on-resistance is 26 mOhm at Vgs = -10 V and Id = -23.5 A.

What package does the FQP47P06 come in?

The device is available in a TO-220-3 through-hole package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the FQP47P06 RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, though this is unverified.

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