| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD917 is a silicon NPN power transistor manufactured by Panasonic Electronic Components. It is designed for horizontal deflection output applications, offering high collector-base breakdown voltage of 330V and high power dissipation.
Key electrical characteristics include a collector-emitter breakdown voltage of 200V, a continuous collector current of 7A, and a pulse collector current of up to 15A. The transistor also features a high switching speed with a fall time of 0.75μs. Its DC current gain ranges from 15 to 45.
The device has a maximum junction temperature of 150℃ and a storage temperature range of -55℃ to 150℃. It is typically housed in a TO-220 package and is suitable for through-hole mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base breakdown voltage (V(BR)CBO) of the 2SD917 is a minimum of 330V.
The 2SD917 has a continuous collector current (IC) rating of 7A.
The typical collector-emitter saturation voltage (VCE(sat)) for the 2SD917 at IC=5A and IB=0.5A is 1.0V.
The DC current gain (hFE) for the 2SD917 at IC=5A and VCE=4V ranges from a minimum of 15 to a maximum of 45.
The fall time (tf) for the 2SD917 is a maximum of 0.75μs.
The maximum power dissipation (PC) for the 2SD917 is 70W at a case temperature of 25℃.
The RoHS status of the 2SD917 is RoHS3 Compliant.
