| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NEC 2SD414 is a silicon epitaxial transistor designed for low-frequency power amplifier applications. It is suitable for audio amplifier drivers with outputs ranging from 30 W to 50 W.
Key electrical characteristics include a Collector to Emitter Voltage (VCEO) of up to 80V and a maximum DC Collector Current (IC(DC)) of 0.8A. The transistor can handle a Total Power Dissipation (PT) of 10W at 25°C case temperature.
Featuring a compact and thin TO-126 package, the 2SD414 is designed for small mounting spaces and is easy to attach to radiators. This makes it a versatile component for various electronic designs requiring power amplification.
Absolute maximum ratings include a Junction Temperature (Tj) of 150°C and a Storage Temperature (Tstg) from -55°C to +150°C. The transistor is ideal for applications demanding high voltage and efficient power handling in a small form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector to emitter voltage (VCEO) for the 2SD414 is 80V.
The maximum power dissipation (PT) for the 2SD414 is 10W at a case temperature of 25°C.
The 2SD414 transistor is supplied in a TO-126 package.
The maximum operating temperature for the 2SD414 is 150°C.
The DC current gain (hFE2) of the 2SD414 at VCE = -5.0/5.0 V and IC = -200/200 mA is typically between 40 and 90.
