| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas 2SB1691 is a PNP bipolar junction transistor (BJT) designed for low frequency power amplifier applications. It features a small MPAK (SC-59A) package, making it suitable for space-constrained designs.
Key electrical characteristics include a collector-to-base breakdown voltage (VCBO) of -60V and a collector-to-emitter breakdown voltage (VCEO) of -50V. The continuous collector current (IC) is rated at -1A, with a peak collector current (ic(peak)) of -2A. The transistor exhibits a low collector-to-emitter saturation voltage (VCE(sat)) of -0.3V maximum at IC/IB = -0.5A/-0.05A, and a typical gain bandwidth product (fT) of 310MHz.
With a high power dissipation capability of 800mW (when using an alumina ceramic board), the 2SB1691 is suitable for various amplification tasks. It is a complementary pair to the 2SD2655.
The device is housed in an MPAK (SC-59A) package, designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2SB1691 is available in the MPAK (SC-59A) surface mount package.
The junction temperature is 150°C maximum, and storage temperature range is -55°C to +150°C.
The maximum continuous collector current is -1 A, with a peak current of -2 A.
The DC current gain (hFE) ranges from 200 to 500 at VCE = -2 V, IC = -0.1 A.
The typical gain bandwidth product is 310 MHz at VCE = -2 V, IC = -0.1 A.
The collector to base breakdown voltage is -60 V, collector to emitter is -50 V, and emitter to base is -6 V.
