| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Junction Temperature | |
| Mounting Type | |
| Reverse Current | |
| Reverse Recovery Time | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Renesas HSM2838C is a Silicon Epitaxial Planar Diode. It is designed for various electronic applications requiring reliable diode functionality.
Key electrical specifications include a maximum reverse voltage (VRM) of 85V and a maximum reverse voltage (VR) of 80V. The forward voltage (VF) is typically 0.76V at a forward current (IF) of 10mA, 0.88V at 50mA, and 0.97V at 100mA. The maximum forward current (IO) is 100mA, with a maximum surge current (IFSM) of 4A. The reverse leakage current (IR) is a maximum of 0.1µA at 80V.
Thermal characteristics include a maximum junction temperature (Tj) of 150°C and a storage temperature range (Tstg) from -55°C to +150°C. The diode has a typical capacitance (C) of 0.5pF at 0V and 1MHz, and a typical reverse recovery time (trr) of 3.0ns under specified conditions.
The HSM2838C is supplied in an MPAK package, suitable for surface mounting. The package has a typical mass of 0.011g and is available on tape and reel in quantities of 3000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum reverse voltage (VRM) for the HSM2838C is 85V.
The typical forward voltage (VF) at 10mA for the HSM2838C is 0.76V.
The typical reverse recovery time (trr) for the HSM2838C is 3.0ns.
The HSM2838C is supplied in an MPAK package.
The storage temperature range for the HSM2838C is -55°C to +150°C.